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t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 1 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? military radar ? civilian radar ? professional and military radio communications ? test instrumentation ? wideband or narrowband amplifiers ? jammers product features ? frequency: dc to 3.5 ghz ? output power (p 3db ): 64 w at 3.3 ghz ? linear gain: 16 db at 3.3 ghz ? operating voltage: 28 v ? low thermal resistance package functional block diagram pin configuration pin no. label 1 v d / rf out 2 v g / rf in flange source general description the triquint t2g4005528-fs is a 55 w (p 3db ) discrete gan on sic hemt which operates from dc to 3.5 ghz. the device is constructed with triquint?s proven tqgan25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. lead-free and rohs compliant evaluation boards are available upon request. ordering information part eccn description t2g4005528-fs ear99 packaged part flangeless t2g4005528-fs- evb1 ear99 3.0-3.5 ghz evaluation board t2g405528-fs- evb2 ear99 1.0 ? 1.4 ghz evaluation board
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 2 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings (1) parameter value breakdown voltage (bv dg ) 100 v (min.) (2 ) drain gate voltage (v dg ) 40 v gate voltage range (v g ) -7 to 0 v drain current (i d ) 20 a gate current (i g ) -20 to 56 ma power dissipation (p d ) 90 w rf input power, cw, t = 25c (p in ) 43 dbm channel temperature (t ch ) 275 c mounting temperature (30 seconds) 320 c storage temperature -40 to 150 c 1. operation of this device outside the parameter rang es given above may cause permanent damage. these are stress ratings only, and functional operation o f the device at these conditions is not implied. 2. established at vgs = -8v and idq = 20ma recommended operating conditions parameter value drain voltage (v d ) 28 v (typ.) drain quiescent current (i dq ) 200 ma (typ.) peak drain current ( i d ) 4.0 a (typ.) gate voltage (v g ) -2.95 v (typ.) channel temperature (t ch ) 225 c (max) power dissipation, cw (p d ) 66 (max) power dissipation, pulse (p d ) 70 (max) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommen ded operating conditions. rf characterization ? load pull performance at 3.5 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 28 v, i dq = 200 ma symbol parameter min typical max units g lin linear gain 16.7 db p 3db output power at 3 db gain compression 64.5 w de 3db drain efficiency at 3 db gain compression 59.2 % pae 3db power-added efficiency at 3 db gain compression 56.7 % g 3db gain at 3 db compression 13.7 db notes: 1. v ds = 28 v, i dq = 200 ma; pulse: 100s, 20% rf characterization ? load pull performance at 3.0 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 28 v, i dq = 200 ma symbol parameter min typical max units g lin linear gain 16.8 db p 3db output power at 3 db gain compression 66.0 w de 3db drain efficiency at 3 db gain compression 61.0 % pae 3db power-added efficiency at 3 db gain compression 58.4 % g 3db gain at 3 db compression 13.8 db notes: 1. v ds = 28 v, i dq = 200 ma; pulse: 100s, 20%
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 3 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com gate leakage test conditions unless otherwise noted: t a = 25 c, v gs = -5 v, v d s = 28v symbol parameter min typical max units i g-leak leakage gate current 4 ma rf characterization ? performance at 3.3 ghz (1, 2) test conditions unless otherwise noted: t a = 25 c, v d = 28 v, i dq = 300 ma symbol parameter min typical max units g lin linear gain 14.0 16.0 db p 3db output power at 3 db gain compression 55.0 62.5 w de 3db drain efficiency at 3 db gain compression 50.0 52.0 % pae 3db power-added efficiency at 3 db gain compression 45.0 49.0 % g 3db gain at 3 db compression 11.0 13.0 db vg gate voltage -3.2 -2.9 -2.5 v notes: 1. performance at 3.3 ghz in the 3.0 to 3.5 ghz eva luation board 2. v ds = 28 v, i dq = 200 ma; pulse: 100s, 20% rf characterization ? mismatched ruggedness at 3.50 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 28 v, i dq = 200 ma symbol parameter typical vswr impedance mismatch ruggedness 10:1 notes: 1. v ds = 28 v, i dq = 200 ma, cw at p 1db
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 4 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) dc at 85 c case 2.1 oc/w channel temperature (t ch ) 225 c notes: thermal resistance measured to bottom of package median lifetime maximum channel temperature t base = 85c, p d = 70 w 100.0 120.0 140.0 160.0 180.0 200.0 220.0 240.0 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 maximum channel temperature (oc) pulse width (sec) max. channel temperature vs. pulse width 5% duty cycle 10% duty cycle 25% duty cycle 50% duty cycle
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 5 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com load pull smith charts (1, 2) rf performance that the device typically exhibits when placed in the sp ecified impedance environment. the impedances are n ot the impedances of the device, they are the impedanc es presented to the device via an rf circuit or loa d- pull system. the impedances listed follow an optimized trajectory to maintain high power and high efficiency. notes: 1. test conditions: v ds = 28 v, i dq = 200 ma 2. test signal: pulse width = 100 sec, duty cycle = 20%
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 6 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance performance is based on compromised impedance point and measured at dut reference plane. 32 34 36 38 40 42 44 46 48 50 10 11 12 13 14 15 16 17 18 32 34 36 38 40 42 44 46 48 50 0 10 20 30 40 50 60 70 80 32 34 36 38 40 42 44 46 48 50 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t2g4005528-fs gain dreff. and pae vs. pout 3000 mhz, 100 usec 20%, vds = 28v, idq = 200 ma gain dreff. pae z s = 3.24 - j5.19 z l = 4.01 - j1.35 32 34 36 38 40 42 44 46 48 50 10 11 12 13 14 15 16 17 18 32 34 36 38 40 42 44 46 48 50 0 10 20 30 40 50 60 70 80 32 34 36 38 40 42 44 46 48 50 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t2g4005528-fs gain dreff. and pae vs. pout 3500 mhz, 100 usec 20%, vds = 28v, idq = 200 ma gain dreff. pae z s = 6.09 - j5.43 z l = 2.63 - j2.67
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 7 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com performance over temperature (1, 2) performance measured in triquint?s 3.0 ghz to 3.5 g hz evaluation board at 3 db compression. notes: 1. test conditions: v ds = 28 v, i dq = 300 ma 2. test signal: pulse width = 100 s, duty cycle = 20%
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 8 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board performance (1, 2) performance at 3 db compression notes: 1. test conditions: v ds = 28 v, i dq = 300 ma 2. test signal: pulse width = 100 s, duty cycle = 20 % application circuit bias-up procedure set gate voltage (v g ) to -5.0v set drain voltage (v d ) to 28 v slowly increase v g until quiescent i d is 200 ma. apply rf signal bias-down procedure turn off rf signal turn off v d and wait 1 second to allow drain capacitor dissipation turn off v g
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 9 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board layout top rf layer is 0.025? thick rogers ro3210, ? r = 10.2. the pad pattern shown has been developed a nd tested for optimized assembly at triquint semiconductor. the pcb land pa ttern has been developed to accommodate lead and pa ckage tolerances. bill of materials reference design value qty manufacturer part number c1, c7 47 pf 2 atc 100a470jw c2, c8 82 pf 2 atc 100b820jw c3, c9 2200 pf 2 vitramon vj1206y222kra c4, c10 22000 pf 2 vitramon 48c4641 c5, c11 1 uf 2 allied 213-0366 c6, c12 470 uf 2 illinois cap 477kxm035m l1, l2 12.5 nh 2 coilcraft a04t_jl r1 2.4 ohm 1 vishay dale crcw25122r40jneg c13 2400 pf 1 dielectric labs c08bl242x-5un-x0b
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 10 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com pin layout note: the t2g4005528-fs will be marked with the ?5528fs2? designator and a lot code marked below the part de signator. the ?yy? represents the last two digits of the calendar year the part was manufactured, the ?ww? is the work we ek of the assembly lot start, the ?mxxx? is the production lot number, and the ?zzz? is an auto-generated serial number. pin description pin symbol description 1 v d / rf out drain voltage / rf output matched to 50 ohms; see ev b layout on page 9 as an example. 2 v g / rf in gate voltage / rf input matched to 50 ohms; see evb layout on page 9 as an example. 3 flange source connected to ground; see evb layout on page 9 as an example. notes: thermal resistance measured to bottom of package
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 11 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical information all dimensions are in millimeters. note: this package is lead-free/rohs-compliant. the plati ng material on the leads is niau. it is compatible with both lead-free (maximum 260 c reflow temperature) and tin-lead (m aximum 245c reflow temperature) soldering processe s.
datasheet: rev ? 2014 product compliance esd sensitivity ratings esd rating: value: test: standard: msl rating level 3 at +260 c convection reflow the part is rated moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j eccn us department of commerce recommended soldering temperature profile datasheet: rev b 06 ? 2014 triquint product compliance esd sensitivity ratings caution! esd esd rating: class 1a value: passes test: human body model (hbm) standard: jedec standard jesd22 msl rating level 3 at +260 c convection reflow the part is rated moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j eccn us department of commerce recommended soldering temperature profile b 06 -12-14 product compliance esd sensitivity ratings caution! esd - sensitive device class 1a passes 250 v min. human body model (hbm) jedec standard jesd22 msl rating level 3 at +260 c convection reflow the part is rated moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j us department of commerce recommended soldering temperature profile product compliance information esd sensitivity ratings sensitive device 250 v min. human body model (hbm) jedec standard jesd22 - a114 level 3 at +260 c convection reflow the part is rated moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j -std-020. us department of commerce ear99 recommended soldering temperature profile 55w , 28v dc information sensitive device a114 the part is rated moisture sensitivity level 3 at 260c per recommended soldering temperature profile , 28v dc ? 3.5 ghz, gan rf power - 12 of 13 - solderability compatible with the latest free solder, 260 c rohs compliance this part directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? ? ? ? ? ? the part is rated moisture sensitivity level 3 at 260c per recommended soldering temperature profile 3.5 ghz, gan rf power solderability compatible with the latest free solder, 260 c rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp- a (c ? pfos free ? svhc free recommended soldering temperature profile t2g4005528 3.5 ghz, gan rf power disclaimer: subject to change without notice solderability compatible with the latest version of j free solder, 260 c rohs compliance compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: lead free halogen free (chlorine, bromine) antimony free a (c 15 h 12 br 4 0 2 ) free pfos free svhc free t2g4005528 3.5 ghz, gan rf power transistor disclaimer: subject to change without notice www.triquint.com version of j - std compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: halogen free (chlorine, bromine) ) free t2g4005528 -fs transistor disclaimer: subject to change without notice www.triquint.com std - 020, lead compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes:
t2g4005528-fs 55w, 28v dc ? 3.5 ghz, gan rf power transistor datasheet: rev b 06-12-14 - 13 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com contact information for the latest specifications, additional product informa tion, worldwide sales and distribution locations, and infor mation about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@triquint.com fax: +1.972.994.8504 for technical questions and application information: email: info-products@triquint.com important notice the information contained herein is believed to be reliab le. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever f or any of the information contained herein. triquint assumes no responsibility or liability whats oever for the use of the information contained herein. the information contained herein is provided "as is, where is " and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change withou t notice. customers should obtain and verify the latest relevant information before placing orders for triquint products . the information contained herein or any use of such informat ion does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual propert y rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized fo r use as critical components in medical, life-saving, or life- sustaining applications, or other applications where a failu re would reasonably be expected to cause severe pers onal injury or death.

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